Exploring thin-film reactions by means of simultaneous x-ray surface roughness and resistance measurements

Defect and Diffusion Forum

Volumn , Issue 194-199 PART 2, 2001, Pages 1477-1490

  Lavoie, C ^a   Cabral Jr , C ^a   D'Heurle, F M ^a   Harper, J M E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Co Si; Ni Si; Nucleation; Reactive Diffusion; Thin Films; Ti Si

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; LIGHT SCATTERING; REACTION KINETICS; SILICON; SUBSTRATES; SURFACE ROUGHNESS; TEXTURES; X RAY DIFFRACTION ANALYSIS; X RAYS;

ELASTIC LIGHT SCATTERING;

THIN FILMS;

EID: 0035780908     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.194-199.1477     Document Type: Article

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