Free electron distribution in AlGaN/GaN heterojunction field-effect transistors

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3721-3729

  Jogai, B ^a,b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; CHARGE BALANCE EQUATION; CHARGE CONSERVATION; DONOR STATE; EXCHANGE CORRELATIONS; FERMI-DIRAC STATISTICS; FREE ELECTRON; FREE ELECTRON CONCENTRATION; MATERIAL INTERFACES; N-TYPE DOPANTS; POLARIZATION DISCONTINUITY; SELF-CONSISTENT SOLUTION; SPONTANEOUS POLARIZATIONS; SUBSTITUTIONAL IMPURITIES; VALENCE BAND EDGES;

ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); SUBSTITUTION REACTIONS; SURFACES;

ELECTRONS;

EID: 0037087269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452773     Document Type: Article

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