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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 140-143

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

(5) Farvacque, J L a Bougrioua, Z b Moerman, I b Van Tendeloo, G c Lebedev, O c

a UNIV LILLE (France)

b GHENT UNIVERSITY (Belgium)

c UNIVERSITY OF ANTWERP (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON TRANSPORT PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033314704 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00431-7 Document Type: Article

Times cited : (7)

References (11)

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