Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 246-251

  Uchida, Kenji ^a   Kawata, Masahiko ^a   Yang, Tao ^a   Goto, Shigeo ^a   Mishima, Tomoyoshi ^a   Niwa, Atsuko ^a   Gotoh, Jun ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; EVAPORATION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; PIT FORMATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032629592     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0022-1     Document Type: Article

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