Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

Thin Solid Films

Volumn 317, Issue 1-2, 1998, Pages 270-273

  Rojas, T C ^a   Molina, S I ^a   Sacedon A ^b   Valtuena F ^b   Calleja, E ^b   Garcia R ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Compostion; InGaAs; Surface morphology

Indexed keywords

DISLOCATIONS (CRYSTALS); MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

INDIUM GALLIUM ARSENIDE; STRAIN RELIEF;

FILM GROWTH;

EID: 0032045633     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00527-0     Document Type: Article

References (9)

1. D.L. Smith, Solid State Commun. 57 (1986) 919-921.
2. D.L. Smith, C. Mailhiot, Rev. Mod. Phys. 62 (1990) 173-234.
3. K. Yang, L.J. Schowalter, B.K. Launch, I.H. Campell, D.L. Smith, J. Vac. Sci. Technol. B 11 (3) (1993) 779.
4. A. Sacedón, F. Calle, A.L. Alvarez, E. Calleja, E. Muñoz, R. Beanland, P. Goodhed, Appl. Phys. Lett. 65 (25) (1994) 1-4.
5. R. Beanland, A. Sacedón, E. Calleja, Inst. Phys. Conf. Ser. 146 (1995) 169-172.
6. T.E. Mitchell, O. Unal, J. Electron. Mater. 20 (10) (1991) 723.
7. X.J. Ning, T. Perez, P. Pirouz, Philo. Mag. A 72 (4) (1995) 837-859.
8. P. Pirouz, Twinning in advanced materials, in: M.H. Yoo, M. Wuttig (Eds.), The Minerals, Metals and Materials Society, Pittsburgh, 1994, pp. 275-295.
9. J.P. Hirth, J. Lothe, Theory of Dislocations, Wiley, 1982.