Photoluminescence and photoluminescence excitation spectra of In0.2Ga0.8N-GaN quantum wells: comparison between experimental and theoretical studies

IEEE Journal of Quantum Electronics

Volumn 35, Issue 10, 1999, Pages 1483-1490

  Jiang, Hongtao ^a   Minsky, Milan ^b   Keller, Stacia ^b   Hu, E ^b   Singh, Jasprit ^a   DenBaars, Steven P ^b  

^a University of Michigan   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

DISORDER INDUCED STATES; EXCITATION INTENSITY; INTERFACE ROUGHNESS; PHOTOLUMINESCENCE EXCITATION SPECTRA; STOKES SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033312587     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.792574     Document Type: Article

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