Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 258-264

  Keller, S ^a   Chichibu, S F ^a,b   Minsky, M S ^a   Hu, E ^a   Mishra, U K ^a   DenBaars, S P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Atomic force microscopy; GaN; InGaN; MOCVD; Photoluminescence; Photoluminescence excitation spectroscopy; Quantum wells

Indexed keywords

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032477116     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00680-0     Document Type: Article

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