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Volumn 88, Issue 1, 1988, Pages 53-66

Critical misorientation morphology in AlGaAs and GaAs grown by atmospheric-pressure MOCVD on misoriented substrates

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - ORIENTATION; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0023994592     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)90007-0     Document Type: Article
Times cited : (13)

References (24)
  • 3
    • 84916392193 scopus 로고    scopus 로고
    • GaAs LPE layers were grown by L.R. Dawson, Sandia Laboratories, USA, private communication, 1980.
  • 17
    • 84916407086 scopus 로고    scopus 로고
    • J.P. André, LEP, France, private communication, 1985.
  • 22
    • 84916451139 scopus 로고    scopus 로고
    • D.L. Rode, Washington University, USA, private communication, 1987.
  • 23
    • 84916442458 scopus 로고    scopus 로고
    • E.S. Johnson and D.L. Rode, unpublished, 1987.
  • 24
    • 84916405381 scopus 로고
    • Proc. 10th Intern. Symp. on GaAs and Related Compounds
    • Albuquerque, NM. 1982, 2nd ed., G.E. Stillman, Inst. Phys, London-Bristol
    • (1983) Inst. Phys. Conf. Ser. 65 , pp. 125
    • Miers1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.