Silicon vacancy-type defects in as-received and 12-MeV proton-irradiated 6H-SiC studied by positron annihilation spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 11, 2003, Pages 1152101-11521010

  Henry, L ^a   Barthe, M F ^a   Corbel, C ^a   Desgardin, P ^a   Blondiaux, G ^a   Arpiainen, S ^b   Liszkay, L ^c  

^a CNRS   (France)

^b AALTO UNIVERSITY   (Finland)

^c WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; NITROGEN; SILICON;

ARTICLE; CRYSTAL STRUCTURE; DECOMPOSITION; ELECTRIC CONDUCTIVITY; PHYSICS; POSITRON ANNIHILATION SPECTROSCOPY; PROTON RADIATION; ROOM TEMPERATURE; SPECTROSCOPY; TEMPERATURE DEPENDENCE;

EID: 0037880478     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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