Doping of 6H-SiC pn structures by proton irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 74-78

  Strel'chuk, Anatoly M ^a,b   Lebedev, Alexandre A ^a   Kozlovski, Vitali V ^c   Savkina, Natali S ^a   Davydov, Denis V ^a   Solov'ev, Viktor V ^a   Rastegaeva, Marina G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

6H SiC; Compensation; Lifetimes; Overcompensation; Proton irradiation

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; EPITAXIAL GROWTH; RADIATION DAMAGE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBLIMATION;

DEEP CENTRES; DEGREE OF COMPENSATION; SUBLIMATION EPITAXY;

PROTON IRRADIATION;

EID: 0032755995     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00581-3     Document Type: Article

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