Identification of vacancies on each sublattice of SiC by coincident Doppler broadening of the positron annihilation photons after electron irradiation

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 70-72

  Muller M A ^a   Rempel, A A ^b   Reichle, K ^a   Sprengel, W ^a   Major, J ^c   Schaefer, H E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

^c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Coincident Doppler broadening; Lattice vacancy; Positron annihilation; Silicon carbide

Indexed keywords

ATOMS; CARBON; DEFECTS; DOPPLER EFFECT; ELECTRON IRRADIATION; ELECTRONS; PHOTONS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

COINCIDENT DOPPLER BROADENING; LATTICE VACANCY; POSITRON LIFETIME MEASUREMENTS;

SILICON CARBIDE;

EID: 0035023106     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.363-365.70     Document Type: Conference Paper

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