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Volumn 248-249, Issue , 1997, Pages 285-288

Vacancy type defects in proton irradiated Sic

Author keywords

Defects; Irradiation; Positron Annihilation; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DOPPLER EFFECT; IRRADIATION;

EID: 0030661099     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.248-249.285     Document Type: Article
Times cited : (3)

References (21)
  • 15
    • 4143068599 scopus 로고    scopus 로고
    • N. Hayashi, H. Watanabe, K. Sakai, K. Kuriyama, Y. Ikeda, H. Maekawa, and T. Miura
    • N. Hayashi, H. Watanabe, K. Sakai, K. Kuriyama, Y. Ikeda, H. Maekawa, and T. Miura,
  • 21
    • 0000053439 scopus 로고
    • ed. S.T. Pantelides, Gordon and Breach, Yverdon
    • G.D. Watkins, in: Deep Levels in Semiconductors, ed. S.T. Pantelides, Gordon and Breach, Yverdon, (1992) p. 177
    • (1992) Deep Levels in Semiconductors , pp. 177
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.