Defect energy levels in electron-irradiated and deuterium-implanted (formula presented) silicon carbide

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 16, 1999, Pages 10823-10829

  Doyle, J P ^b  

^a Campus Box 7908   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000730934     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.10823     Document Type: Article

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