Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 1, 2000, Pages 33-38

  Ling, C C ^a   Deng, A H ^a   Fung, S ^a   Beling, C D ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BINDING ENERGY; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRON TRAPS; NEGATIVE IONS; NITROGEN; POINT DEFECTS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; TEMPERATURE; THERMAL EFFECTS;

POSITRON BINDING; POSITRON LIFETIME SPECTROSCOPY; POSITRON TRAPPING; RYDBERG LIKE STATES; SHALLOW TRAP;

SILICON CARBIDE;

EID: 0033716049     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050007     Document Type: Article

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