Calculated positron annihilation parameters for defects in SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 533-536

  Staab, T E M ^a   Torpo, L M ^a,b   Puska, M J ^a   Nieminen, R M ^a  

^a AALTO UNIVERSITY   (Finland)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON IRRADIATION; LATTICE VIBRATIONS; NUMERICAL METHODS; POSITRONS; RELAXATION PROCESSES;

LATTICE RELAXATIONS; POSITRON ANNIHILATION PARAMETERS;

SILICON CARBIDE;

EID: 17144433224     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.533     Document Type: Article

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