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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 24, 2000, Pages 16638-16644

Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures

(10) Barthe, M F a Henry, L a Corbel, C a Blondiaux, G a Saarinen, K b Hautojarvi P b Hugonnard, E c Di Cioccio, L c Letertre, F d Ghyselen, B d

a CNRS (France)

b AALTO UNIVERSITY (Finland)

c CEA LETI (France)

d PARC TECHNOLOGIQUE DES FONTAINES (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; HYDROGEN; PROTON; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; DESTRUCTION; ELECTRON; ENERGY TRANSFER; POSITRON; STRUCTURE ANALYSIS;

EID: 0034670910 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.16638 Document Type: Article

Times cited : (22)

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