Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation

Applied Physics Letters

Volumn 78, Issue 9, 2001, Pages 1234-1236

  Britton, D T ^a,b   Barthe, M F ^b   Corbel, C ^b   Hempel, A ^a,b   Henry, L ^b   Desgardin, P ^b   Bauer Kugelmann, W ^c   Kogel G ^c   Sperr, P ^c   Triftshauser W ^c  

^a UNIVERSITY OF CAPE TOWN   (South Africa)

^b CNRS   (France)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044405147     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1350961     Document Type: Article

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