Vacancy-type defects in proton-irradiated SiC

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 733-738

  Puff, W ^a   Mascher, P ^b   Balogh, A G ^c   Baumann, H ^d  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b MCMASTER UNIVERSITY   (Canada)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d GOETHE UNIVERSITY   (Germany)

Author keywords

Defects; Irradiation; Positron annihilation; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DOPPLER EFFECT; HIGH TEMPERATURE EFFECTS; IRRADIATION; PROTONS; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS;

POSITRON ANNIHILATION SPECTROSCOPY; VACANCY TYPE DEFECTS;

SILICON CARBIDE;

EID: 3743138481     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.733     Document Type: Article

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