Interstitials in SiC: A model for the DII center

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 656-659

  Mattausch, Alexander ^a   Bockstedte, Michel ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

DII center; LVM; Point defects; Silicon carbide

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; PHONONS; PHOTOLUMINESCENCE; POINT DEFECTS;

LOCALIZED VIBRATIONAL MODES (LVM);

SILICON CARBIDE;

EID: 17044455764     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00782-7     Document Type: Article

References (5)