Investigation of an ion-implantation induced high temperature persistent intrinsic defect in SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 377-380

  Sridhara, S G ^a   Carlsson, F H C ^a   Bergman, J P ^a   Henry, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; EXCITONS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MAGNETOOPTICAL EFFECTS; PHOTOLUMINESCENCE;

BOUND EXCITON RECOMBINATION; HIGH TEMPERATURE PERSISTENT INTRINSIC DEFECT; ISOELECTRONIC CENTERS;

SILICON CARBIDE;

EID: 14344273983     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.377     Document Type: Article

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