Integration technology for ferroelectric memory devices

Microelectronics Reliability

Volumn 43, Issue 3, 2003, Pages 385-398

  Kim, Kinam ^a   Song, Yoon J ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC POWER SUPPLIES TO APPARATUS; ETCHING; FATIGUE OF MATERIALS; METALLIZING; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SMART CARDS;

HYDROGEN BARRIER TECHNOLOGY;

FERROELECTRIC MATERIALS;

EID: 0037371695     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00285-8     Document Type: Conference Paper

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