Hydrogen barrier interlayer dielectric with a SiO2/SiON/SiO2 stacked film for logic-embedded FeRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 801-804

  Nakura, T ^a   Mori, H ^a   Inoue, N ^a   Ikarashi, N ^a   Takahashi, S ^a   Kasai, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIELECTRIC FILMS; FERROELECTRIC DEVICES; HYDROGEN; IRIDIUM COMPOUNDS; LEAD COMPOUNDS; MOSFET DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; TEMPERATURE;

FERROELECTRIC CAPACITORS; HYDROGEN BARRIER INTERLAYER DIELECTRIC; METAL WIRING; STACKED FILM;

DIELECTRIC MATERIALS;

EID: 0033332640     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)