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Volumn 401, Issue 6754, 1999, Pages 682-684

Lanthanum-substituted bismuth titanate for use in non-volatile memories

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH DERIVATIVE; LANTHANUM;

EID: 0033554712     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/44352     Document Type: Article
Times cited : (2269)

References (19)
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  • 3
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    • Keijser, M.1    Dormans, G.J.M.2
  • 5
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    • Electrical properties' maxima in thin films of the lead zirconate-lead titanate solid solution system
    • Chen, H. D., Udayakumar, K. R., Gaskey, C. J. & Cross, L. E. Electrical properties' maxima in thin films of the lead zirconate-lead titanate solid solution system. Appl. Phys. Lett. 67, 3411-3413 (1995).
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3411-3413
    • Chen, H.D.1    Udayakumar, K.R.2    Gaskey, C.J.3    Cross, L.E.4
  • 6
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  • 9
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    • Laser-ablation deposition and characterization of ferroelectric capacitors for nonvolatile memories
    • Auciello, O & Ramesh, R. Laser-ablation deposition and characterization of ferroelectric capacitors for nonvolatile memories. MRS Bull. 21, 31-36 (1996).
    • (1996) MRS Bull. , vol.21 , pp. 31-36
    • Auciello, O.1    Ramesh, R.2
  • 12
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    • 9 thin films
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  • 18
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    • in the press
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  • 19
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.