Electrical properties of submicron (≥ 0.13 μm2) Ir/PZT/Ir capacitors formed on W plugs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 940-942

  Moise, T S ^a   Summerfelt, S R ^a   Xing, G ^a   Colombo, L ^a   Sakoda, T ^a   Gilbert, S R ^a   Loke, A ^a   Ma, S ^a   Kavari, R ^a   Wills, L A ^a   Hsu, T ^a   Amano, Jun ^a   Johnston, S T ^a   Vestyck, D J ^a   Russell, M W ^a   et al , ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODES; ETCHING; FERROELECTRIC DEVICES; IRIDIUM; LEAD COMPOUNDS; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; TUNGSTEN;

FERROELECTRIC CAPACITORS; FERROELECTRIC MEMORY; PLANAR BOTTOM ELECTRODES; SATURATION POLARIZATION;

CAPACITORS;

EID: 17644435882     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)