Novel ferroelectric epitaxial (Ba,Sr)TiO3 capacitor for deep sub-micron memory applications

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 529-531

  Kawakubo, T ^a   Abe, K ^a   Komatsu, S ^a   Sano, K ^a   Yanase, N ^a   Mochizuki, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC DEVICES; FERROELECTRICITY; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS;

HETEROEPITAXIAL TECHNIQUE; LATTICE MISMATCH;

CAPACITORS;

EID: 0031268461     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641435     Document Type: Article

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