Integration of (Ba,Sr)TiO3 capacitor with platinum electrodes having SiO2 spacer

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 249-252

  Lee, Byoung Taek ^a   Lee, Ki Hoon ^a   Hwang, Cheol Seong ^a   Kim, Wan Don ^a   Horii, Hideki ^a   Kim, Hyoun Woo ^a   Cho, Hag Ju ^a   Kang, Chang Seok ^a   Chung, Ju Hyuck ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM);

ANNEALING; BARIUM TITANATE; CAPACITANCE; CURRENT DENSITY; DIFFUSION IN SOLIDS; LEAKAGE CURRENTS; OXIDATION RESISTANCE; PLATINUM; RANDOM ACCESS STORAGE; SILICA;

CAPACITORS;

EID: 84886447979     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)