Technology perspective for 1T/1C FRAM

Integrated Ferroelectrics

Volumn 25, Issue 1-4, 1999, Pages 149-167

  Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

1T1C; Density; FRAM; Performance; Perspective; Technology

Indexed keywords

COST EFFECTIVENESS; DENSITY (SPECIFIC GRAVITY); FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGICAL FORECASTING;

FERROELECTRIC RANDOM ACCESS MEMORY; MEMORY DEVICES;

RANDOM ACCESS STORAGE;

EID: 0033314228     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589908210168     Document Type: Article

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