Electrical properties of highly reliable plug buffer layer for high-density ferroelectric memory

Applied Physics Letters

Volumn 80, Issue 13, 2002, Pages 2377-2379

  Song, Yoon J ^a   Koo, B J ^a   Lee, J K ^a   Kim, C J ^a   Jang, N W ^a   Kim, H H ^a   Jung, D J ^a   Lee, S Y ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; COERCIVE VOLTAGES; CONTACT SIZE; FERROELECTRIC CAPACITORS; FERROELECTRIC MEMORY; FERROELECTRIC PROPERTY; FERROELECTRIC RANDOM ACCESS MEMORY DEVICES; HIGH-DENSITY; MICROVOID; RANDOM FUNCTIONS; REMNANT POLARIZATIONS; SCANNING ELECTRONS; SINGLE-BIT; THERMALLY STABLE; WAFER YIELDS;

BUFFER LAYERS; FERROELECTRIC DEVICES; FERROELECTRICITY; POLYSILICON; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; SILICIDES; SILICON WAFERS;

ELECTRIC PROPERTIES;

EID: 79956051864     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467619     Document Type: Article

References (6)

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