Highly manufacturable 1T1C 4 Mb FRAM with novel sensing scheme

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 279-282

  Jung, D J ^a   Jeon, B G ^a   Kim, H H ^a   Song, Y J ^a   Koo, B J ^a   Lee, S Y ^a   Park, S O ^a   Park, Y W ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FERROELECTRIC DEVICES; HYSTERESIS; INTEGRATED CIRCUIT MANUFACTURE; SCANNING ELECTRON MICROSCOPY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITOR OVER BIT LINE; FERROELECTRIC CAPACITOR; FERROELECTRIC RANDOM ACCESS MEMORY; GATE OXIDE REFERENCE CELL;

RANDOM ACCESS STORAGE;

EID: 0033307464     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)