0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

IEEE Journal of Solid-State Circuits

Volumn 35, Issue 11, 2000, Pages 1690-1694

  Jeon, Byung Gil ^a   Choi, Mun Kyu ^a   Song, Yoonjong ^a   Oh, Seung Kyu ^a   Chung, Yeonbae ^a   Suh, Kang Deog ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER CIRCUITS; DATA PROCESSING; ELECTRIC POWER SUPPLIES TO APPARATUS; FERROELECTRIC DEVICES; MICROPROCESSOR CHIPS; RANDOM ACCESS STORAGE;

DATA LOSS; FIXED BITLINE REFERENCE VOLTAGE GENERATOR; NONVOLATILE FERROELECTRIC RANDOM ACCESS MEMORY; VOLTAGE LEVEL DETECTOR;

NONVOLATILE STORAGE;

EID: 0034316380     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.881216     Document Type: Article

References (3)

1. D. J. Jung et al., "Highly manufacturable 1T1C 4-Mb FRAM with novel sensing scheme," in IEDM Tech. Dig., 1999, pp. 279-282.
2. T. Miyakawa et al., "A 0.5-μm 3-V 1T1C 1-Mb FRAM with a variable reference bitline voltage scheme using a fatigue-free reference capacitor," in ISSCC Dig. Tech. Papers, 1999, pp. 104-105.
3. Y. Chung et al., "A 3.3-V 4-Mb nonvolatile ferroelectric RAM with a selectively driven double-pulsed plate read/write-back scheme," in Symp. VLSI Circuits Dig. Tech. Papers, 1999, pp. 97-98.