FRAM cell design with high immunity to fatigue and imprint for 0.5 μm 3 V 1T1C 1 M bit FRAM

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 359-362

  Tanaka, S ^a   Ogiwara, R ^a   Itoh, Y ^a   Miyakawa, T ^a   Takeuchi, Y ^a   Doumae, S ^a   Takenaka, H ^a   Kamata, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; FATIGUE OF MATERIALS; FERROELECTRIC DEVICES;

FERROELECTRIC RANDOM ACCESS MEMORIES (FRAM);

RANDOM ACCESS STORAGE;

EID: 0032267113     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)