A 0.25 μm 3.0 V 1T1C 32 Mb nonvolatile ferroelectric RAM with address transition detector(ATD) and current forcing latch sense amplifier(CFLSA) scheme

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 162-163+455+151

  Choi, Mun Kyu ^a   Jeon, Byung Gil ^a   Jang, Nakwon ^a   Min, Byung Jun ^a   Song, Yoon Jong ^a   Lee, Sung Yung ^a   Kim, Hyun Ho ^a   Jung, Dong Jin ^a   Joo, Heung Jin ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; MICROPROCESSOR CHIPS; RANDOM ACCESS STORAGE; TRANSISTORS;

ADDRESS TRANSITION DETECTORS (ADT);

FERROELECTRIC DEVICES;

EID: 0036117394     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. A nonvolatile ferroelectric RAM with common plate folded bit-line cell and enhanced data sensing scheme
2. A 0.4 mm 3.3 V 1T1C 4 Mb nonvolatile ferroelectric with fixed bit-line reference voltage scheme and data protection circuit