Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics

Current Opinion in Solid State and Materials Science

Volumn 6, Issue 5, 2002, Pages 439-444

  Roca i Cabarrocas, P ^a  

^a ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS INDUSTRY; FILM; SILICON; VAPOR DEPOSITION;

EID: 0036819814     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(02)00112-2     Document Type: Article

References (41)

1. Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large area electronics
2. Effect of hydrogen dilution on the structure of amorphous silicon alloys
3. Modelling of silicon hydride clustering in a low-pressure silane plasma
4. Deposition of intrinsic, p-type and n-type hydrogenated amorphous silicon films at 50 °C
5. Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films
6. Powder dynamics in very high frequency silane plasmas
7. Growth processes of particles in high frequency silane plasmas
8. Hydrogenated amorphous silicon deposited at very high rates by an expanding Ar-H2-SiH4 plasma
9. Numerical investigation of thermophoretic effects on cluster transport during thermal plasma deposition process
10. Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 Å/s
11. Model of particle growth in silane discharges
12. 6 R.F. discharges: Pressure and temperature dependence of film growth in relation to the α-γ discharge transition
13. Dusty plasmas
14. Midgap density of states in hydrogenated polymorphous silicon
15. Growth and optoelectronic properties of polymorphous silicon thin films
16. Polymorphous silicon: Transport properties and solar cell applications
17. Cluster-suppressed plasma chemical vapor depostion method for high quality hydrogenated amorphous silicon films
18. Dusty plasma formation: Physics and critical phenomena. Theoretical approach
19. Towards high deposition rates of a-Si:H: The limiting factors
20. On the growth mechanism of a-Si:H
21. Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to films growth
22. Binding and surface diffusion of SiH3 radicals on a growing a-Si:H surface
23. Growth mechanism of microcrystalline silicon obtained from reactive plasmas
24. Structural study of initial layer for mc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy
25. Sub-surface a-Si:H to mc-Si:H transformation during magnetron sputter deposition determined by spectroscopic ellipsometry
26. In-situ correlation between optical and electrical properties of intrinsic and n-type microcrystalline silicon films
27. Low temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon: Optimum crystalline fractions for solar cells applications
28. Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth
29. Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment
30. Etching and hydrogen diffusion mechanisms during hydrogen plasma exposure of silicon thin films
31. In situ ESR study to detect the diffusion of free H and creation of dangling bonds in hydrogenated amorphous silicon
32. Hydrogen chemical potential and structure of a-Si:H
33. Mechanism of mechahydrogen-induced crystallization of amorphous silicon
34. Contribution of ions to the growth of amorphous, polymorphous and microcrystalline silicon thin films, and their effect on the structural and electronic properties
35. High rate growth of microcrystalline silicon at low temperatures
36. In-situ measurements of changes in the structure and in the excess charge carrier kinetics at the silicon surface during hydrogen and helium plasma exposure
37. Ion bombardement effects on the microcrystalline silicon growth mechahydrogennisms and structure
38. Anatomy of mc-Si films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry
39. Ion-energy effects in silicon ion-beam epitaxy