Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser

Electronics Letters

Volumn 32, Issue 17, 1996, Pages 1585-1586

  Nakahara, K ^a   Kondow, K ^a   Kitatani, T ^a   Yazawa, Y ^a   Uomi, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH TEMPERATURE APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

SINGLE QUANTUM WELL (SQW) LASERS;

QUANTUM WELL LASERS;

EID: 0030217086     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961039     Document Type: Article

References (5)

1. YABLONOVITCH, E., and KANE, O.E.: 'Reduction of lasing threshold current density by lowering of valence band effective mass', J. Lightwave Techonol., 1986, 4, pp. 504-506
2. 1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications', IEEE J. Quantum Electron., 1994, 30, pp. 204-205
3. 0.95As ternary substrate', IEEE Photonics Technol. Lett., 1994, 6, pp. 1170-1172
4. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
5. 1-x using a N radical as the N source', Jpn. J. Appl. Phys., 1994, 33, pp. L1056-L1058