Low-threshold lasing at 1.3 μm from GaAsSb quantum wells directly grown on GaAs substrates

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1998, Pages 149-150

  Yamada, Mitsuki ^a   Anan, Takayoshi ^a   Tokutome, Keiichi ^a   Nishi, Kenichi ^a   Gomyo, Akiko ^a   Sugou, Shigeo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; CURRENT DENSITY; ETCHING; GRADIENT INDEX OPTICS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

WET CHEMICAL ETCHING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032288384     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)