1.32-μm GaInNAs-GaAs laser with a low threshold current density

IEEE Photonics Technology Letters

Volumn 14, Issue 3, 2002, Pages 275-277

  Peng, C S ^a   Jouhti, T ^a   Laukkanen, P ^a   Pavelescu, E M ^a   Konttinen, J ^a   Li, W ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

1.3 m lasers on GaAs; GaInNAs GaAs; Molecular beam epitaxy; Ridge waveguide laser; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0036504282     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.986784     Document Type: Article

References (14)

1. GaInAsN - A novel material for long wavelength laser diodes with excellent high temperature performance
2. Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
3. 1200 nm GaAs based vertical cavity lasers employing GaInNA's multiple quantum well active regions
4. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers
5. Reduced threshold current densities of (GaIn)(NA's)/GaAs single-quantum well lasers for emission wavelength in the range 1.28-1.38 mm
6. Room-temperature pulsed operation of 1.3-μm GaInNAs/GaAs laser diode
7. InGaAsN solar cells with 1.0 eV bandgap, lattice matched to GaAs
8. GaInAsN resonant cavity enhanced photodetector operating at 1.3 μm
9. Annealing behavior of p-type GaInAsN grown by GSMBE
10. Static and dynamic characteristics of 1.29 μm GaInNA's ridge-waveguide laser diodes
11. Room-temperature continuous-wave operation of 1.24-μm GaInNA's lasers grown by metal-organic chemical vapor deposition
12. Insights into carrier recombination processes in 1.3 μm GaInNAs-based semiconductor lasers attained using high pressure
13. Band anticrossing in GaInNA's alloys
14. Temperature dependence of lasing wavelength in a GaInNA's laser diode