Mechanism analysis of improved GaInNAs optical properties through thermal annealing

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 345-349

  Kitatani, T ^a   Nakahara, K ^a   Kondow, M ^a   Uomi, K ^a   Tanaka, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CATHODOLUMINESCENCE; ENERGY GAP; HIGH TEMPERATURE PROPERTIES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

GALLIUM INDIUM NITROGEN ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034140413     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00568-0     Document Type: Article

References (8)

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