A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 11, 1997, Pages 1448-1450

  Miyamoto, T ^b   Takeuchi, K ^b   Koyama, F ^a,b   Iga, K ^a,b  

^a IEEE

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaInNAs; Quantum wells; Semiconductor lasers; Semiconductor superlattices

Indexed keywords

LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

LATTICE MATCHED INTERMEDIATE SEMICONDUCTOR LAYERS;

QUANTUM WELL LASERS;

EID: 0031273376     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.634704     Document Type: Article

References (17)

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