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Applied Physics A: Materials Science and Processing

Volumn 75, Issue 1, 2002, Pages 79-88

First-principles studies of kinetics in epitaxial growth of III-V semiconductors

(3) Kratzer, P a Penev, E a Scheffler, M a

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DESORPTION; DIFFUSION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MONTE CARLO METHODS; NUCLEATION; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SEMICONDUCTING INDIUM COMPOUNDS;

FIRST PRINCIPLES MOLECULAR DYNAMICS; INDIUM ARSENIDE; KINETIC MONTE CARLO SIMULATION; STRAIN FIELD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036642862 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390101057 Document Type: Article

Times cited : (79)

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