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Volumn 163, Issue 1-2, 1996, Pages 149-164

A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy

(1) Madhukar, Anupam a

a UNIVERSITY OF SOUTHERN CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; COMPUTER SIMULATION; CRYSTAL DEFECTS; MATHEMATICAL MODELS; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRESS RELAXATION; SURFACES; THREE DIMENSIONAL;

ATOMIC PROCESSES; DEFECT INITIATION; NANOSCALE MESAS; SELF LIMITING GROWTH; STRAIN RELAXATION; UNIFIED MODEL;

EPITAXIAL GROWTH;

EID: 0030563250 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)01055-6 Document Type: Article

Times cited : (29)

References (34)

1
- 0027644391
- See, for example: A. Madhukar, Thin Solid Films 231 (1993) 8.
- (1993) Thin Solid Films , vol.231 , pp. 8
- Madhukar, A.¹

2
- 0003804872
- Academic Press, New York
- See, for example: T. Pearsall, Ed. Strained Layer Superlattices, Vois. 1 and 2 (Academic Press, New York, 1990).
- (1990) Strained Layer Superlattices , vol.1-2
- Pearsall, T.¹

3
- 0003945508
- Academic Press, New York
- See, for example: J.W. Matthews, Ed., Epitaxial Growth, Vols. A and B (Academic Press, New York, 1975).
- (1975) Epitaxial Growth , vol.A AND B
- Matthews, J.W.¹

4
- 0024611337
- D.J. Srolovitz, Acta Met. 37 (1989) 621.
- (1989) Acta Met. , vol.37 , pp. 621
- Srolovitz, D.J.¹

5
- 0042715383
- S.V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 3 (1985) 540; Phys. Rev. Lett. 56 (1986) 1066; J. Appl. Phys. 65 (1989) 3872.
- (1985) J. Vac. Sci. Technol. B , vol.3 , pp. 540
- Ghaisas, S.V.¹ Madhukar, A.²

6
- 30244460678
- S.V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 3 (1985) 540; Phys. Rev. Lett. 56 (1986) 1066; J. Appl. Phys. 65 (1989) 3872.
- (1986) Phys. Rev. Lett. , vol.56 , pp. 1066

7
- 0038952752
- S.V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 3 (1985) 540; Phys. Rev. Lett. 56 (1986) 1066; J. Appl. Phys. 65 (1989) 3872.
- (1989) J. Appl. Phys. , vol.65 , pp. 3872

8
- 0016070609
- J.R. Arthur, Surf. Sci. 43 (1974) 449; J. Appl. Phys. 37 (1966) 3057; 39 (1968) 4032.
- (1974) Surf. Sci. , vol.43 , pp. 449
- Arthur, J.R.¹

9
- 0040405721
- J.R. Arthur, Surf. Sci. 43 (1974) 449; J. Appl. Phys. 37 (1966) 3057; 39 (1968) 4032.
- (1966) J. Appl. Phys. , vol.37 , pp. 3057

10
- 0000516608
- J.R. Arthur, Surf. Sci. 43 (1974) 449; J. Appl. Phys. 37 (1966) 3057; 39 (1968) 4032.
- (1968) J. Appl. Phys. , vol.39 , pp. 4032

11
- 0001061773
- C.T. Foxon and B.A. Joyce, Surf. Sci. 50 (1975) 434; 64 (1977) 293.
- (1975) Surf. Sci. , vol.50 , pp. 434
- Foxon, C.T.¹ Joyce, B.A.²

12
- 21544460057
- C.T. Foxon and B.A. Joyce, Surf. Sci. 50 (1975) 434; 64 (1977) 293.
- (1977) Surf. Sci. , vol.64 , pp. 293

13
- 84884095844
- For a review of the CDRI model based results until 1987, see: A. Madhukar and S.V. Ghaisas, CRC Crit. Rev. Solid State Mater. Sci. 14 (1988) 1.
- (1988) CRC Crit. Rev. Solid State Mater. Sci. , vol.14 , pp. 1
- Madhukar, A.¹ Ghaisas, S.V.²

14
- 0038953996
- S.V. Ghaisas and A. Madhukar, Proc. Soc. Photo-Opt. Instrum. Eng. (SPIE) 944 (1988) 16; J. Vac. Sci. Technol. B 7 (1989) 264.
- (1988) Proc. Soc. Photo-Opt. Instrum. Eng. (SPIE) , vol.944 , pp. 16
- Ghaisas, S.V.¹ Madhukar, A.²

15
- 0038953996
- S.V. Ghaisas and A. Madhukar, Proc. Soc. Photo-Opt. Instrum. Eng. (SPIE) 944 (1988) 16; J. Vac. Sci. Technol. B 7 (1989) 264.
- (1989) J. Vac. Sci. Technol. B , vol.7 , pp. 264

16
- 0042706894
- S.V. Ghaisas and A. Madhukar, J. Appl. Phys. 65 (1989) 1888.
- (1989) J. Appl. Phys. , vol.65 , pp. 1888
- Ghaisas, S.V.¹ Madhukar, A.²

17
- 30244514840
- S.B. Ogale and A. Madhukar, Appl. Phys. Lett. 52 (1988) 723.
- (1988) Appl. Phys. Lett. , vol.52 , pp. 723
- Ogale, S.B.¹ Madhukar, A.²

18
- 0343078495
- A. Madhukar and S.V. Ghaisas, Appl. Phys. Lett. 47 (1985) 247.
- (1985) Appl. Phys. Lett. , vol.47 , pp. 247
- Madhukar, A.¹ Ghaisas, S.V.²

19
- 0021466920
- B.F. Lewis, T.C. Lee, F.J. Grunthaner, A. Madhukar, R. Fernandez and J. Maserjian, J. Vac. Sci. Technol. B 2 (1984) 419.
- (1984) J. Vac. Sci. Technol. B , vol.2 , pp. 419
- Lewis, B.F.¹ Lee, T.C.² Grunthaner, F.J.³ Madhukar, A.⁴ Fernandez, R.⁵ Maserjian, J.⁶

20
- 0041064261
- K.R. Evans, C.E. Stutz, D.K. Lorance and R.L. Jones, J. Vac. Sci. Technol. B 7 (1989) 259.
- (1989) J. Vac. Sci. Technol. B , vol.7 , pp. 259
- Evans, K.R.¹ Stutz, C.E.² Lorance, D.K.³ Jones, R.L.⁴

21
- 0001402006
- N. Grandjean, J. Massies and V.H. Etgens, Phys. Rev. Lett. 69 (1992) 796.
- (1992) Phys. Rev. Lett. , vol.69 , pp. 796
- Grandjean, N.¹ Massies, J.² Etgens, V.H.³

22
- 33746405789
- S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett. 57 (1990) 2110; S. Guha, PhD Dissertation, University of Southern California, 1991.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 2110
- Guha, S.¹ Madhukar, A.² Rajkumar, K.C.³

23
- 33746405789
- PhD Dissertation, University of Southern California
- S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett. 57 (1990) 2110; S. Guha, PhD Dissertation, University of Southern California, 1991.
- (1991)
- Guha, S.¹

24
- 0000655054
- F. LeGoues, M.C. Reuter, J. Tersoff, M. Hammar and R.M. Tromp. Phys. Rev. Lett. 73 (1994) 3447.
- (1994) Phys. Rev. Lett. , vol.73 , pp. 3447
- LeGoues, F.¹ Reuter, M.C.² Tersoff, J.³ Hammar, M.⁴ Tromp, R.M.⁵

25
- 30244552290
- April 17-21, San Francisco, CA, to appear in Symp. Proc. C.
- Q. Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen and A. Madhukar, Paper presented at the MRS Spring Meeting, April 17-21, 1995, San Francisco, CA, to appear in Symp. Proc. C.
- (1995) MRS Spring Meeting
- Xie, Q.¹ Kobayashi, N.P.² Ramachandran, T.R.³ Kalburge, A.⁴ Chen, P.⁵ Madhukar, A.⁶

26
- 0029304474
- Q. Xie, P. Chen, A. Kalburge, T.R. Ramachandran, A. Nayfonov, A. Konkar and A. Madhukar, J. Crystal Growth 150 (1995) 357.
- (1995) J. Crystal Growth , vol.150 , pp. 357
- Xie, Q.¹ Chen, P.² Kalburge, A.³ Ramachandran, T.R.⁴ Nayfonov, A.⁵ Konkar, A.⁶ Madhukar, A.⁷

27
- 0041591402
- S. Fafard, D. Leonard, J.L. Merz and P.M. Petroff, Appl. Phys. Lett. 65 (1994) 819.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 819
- Fafard, S.¹ Leonard, D.² Merz, J.L.³ Petroff, P.M.⁴

28
- 0028494161
- J.Y. Marzin, J.M. Gerard, A. Izrael, D. Barrier and G. Bastard, Phys. Rev. Lett. 73 (1994) 716.
- (1994) Phys. Rev. Lett. , vol.73 , pp. 716
- Marzin, J.Y.¹ Gerard, J.M.² Izrael, A.³ Barrier, D.⁴ Bastard, G.⁵

29
- 0007154865
- February 20-25, 1995, Ringberg Castle, Germany, NATO ASI Series, Eds. K. Eberl, P. Petroff and P. Demeester Kluwer, Dordrecht
- A. Madhukar, Proc. NATO Advanced Workshop, February 20-25, 1995, Ringberg Castle, Germany, NATO ASI Series, Eds. K. Eberl, P. Petroff and P. Demeester (Kluwer, Dordrecht, 1995) pp. 19-33.
- (1995) Proc. NATO Advanced Workshop , pp. 19-33
- Madhukar, A.¹

30
- 36449008031
- Q. Xie, P. Chen and A. Madhukar, Appl. Phys. Lett. 65 (1994) 2051.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2051
- Xie, Q.¹ Chen, P.² Madhukar, A.³

31
- 0005834097
- Q. Xie, A. Madhukar, P. Chen and N.P. Kobayashi, Phys. Rev. Lett. 75 (1995) 2542.
- (1995) Phys. Rev. Lett. , vol.75 , pp. 2542
- Xie, Q.¹ Madhukar, A.² Chen, P.³ Kobayashi, N.P.⁴

32
- 0029306539
- A. Konkar, K.C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H.T. Lin and D.H. Rich, J. Crystal Growth 150 (1995) 311.
- (1995) J. Crystal Growth , vol.150 , pp. 311
- Konkar, A.¹ Rajkumar, K.C.² Xie, Q.³ Chen, P.⁴ Madhukar, A.⁵ Lin, H.T.⁶ Rich, D.H.⁷

33
- 30244451827
- April 17-21, San Francisco, CA, to appear in Symp. Proc. D.
- A. Konkar, A. Madhukar and P. Chen, Paper presented at the MRS Spring Meeting, April 17-21, 1995, San Francisco, CA, to appear in Symp. Proc. D.
- (1995) MRS Spring Meeting
- Konkar, A.¹ Madhukar, A.² Chen, P.³

34
- 0004726931
- K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L. Chen, K. Rammohan and D.H. Rich, J. Vac. Sci. Technol. B 12 (1994) 1071.
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 1071
- Rajkumar, K.C.¹ Madhukar, A.² Chen, P.³ Konkar, A.⁴ Chen, L.⁵ Rammohan, K.⁶ Rich, D.H.⁷

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