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Volumn 86, Issue 16, 2001, Pages 3586-3589

Subsurface dimerization in III-V semiconductor (001) surfaces

(12) Kumpf, C a Marks, L D b Ellis, D c Smilgies, D a Landemark, E a Nielsen, M a Feidenhans'l, R a Zegenhagen, J d Bunk, O e Zeysing, J H e Su, Y e Johnson, R L e

a TECHNICAL UNIVERSITY OF DENMARK (Denmark)

b Northwestern University (United States)

c NORTHWESTERN UNIVERSITY (United States)

d EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

e UNIVERSITY OF HAMBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DIMERIZATION; DIMERS; MATHEMATICAL MODELS; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

ATOMIC STRUCTURE; SUBSURFACE DIMERIZATION; SURFACE ATOMS;

SURFACE PHENOMENA;

EID: 18544397105 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.3586 Document Type: Article

Times cited : (116)

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