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Thin Solid Films

Volumn 272, Issue 2, 1996, Pages 345-363

First-principles calculations of surface adsorption and migration on GaAs surfaces

(1) Shiraishi, Kenji a

a NTT Basic Research Laboratories (Japan)

Author keywords

Adsorption; Arsenic; Gallium

Indexed keywords

ADSORPTION; ARSENIC; BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE;

AB INITIO CALCULATIONS; DIMERS; ELECTRON COUNTING MODEL; LATTICE SITES; SURFACE DISTORTION;

SURFACES;

EID: 0029755021 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(95)06958-5 Document Type: Article

Times cited : (40)

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