Monte Carlo growth simulation for AlxGa1-xAs heteroepitaxy

Journal of Crystal Growth

Volumn 212, Issue 1, 2000, Pages 128-137

  Grosse, Frank ^a   Zimmermann, Roland ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

HETEROEPITAXY; VICINAL SURFACES;

EPITAXIAL GROWTH;

EID: 0033737540     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00848-9     Document Type: Article

References (34)

1. Adachi S. GaAs and Related Materials. 1994;World Scientific, Singapore.
2. Bhat R.et al. J. Crystal Growth. 93:1988;850.
3. Kapon E., Hwang D., Bhat R. Phys. Rev. Lett. 63:1989;430.
4. Gustafsson A., Reinhardt F., Biasiol G., Kapon E. Appl. Phys. Lett. 67:1995;430.
5. Biasiol G., Kapon E., Ducommun Y., Gustafsson A. PRB. 75:1998;R9416.
6. Shen X.Q., Tanaka M., Nishinaga T. J. Crystal Growth. 127:1993;932.
7. Shen X.Q., Tanaka M., Wada K., Nishinaga T. J. Crystal Growth. 135:1994;85.
8. Shitara T.et al. Phys. Rev. B. 46:1992;6815.
9. Groe F., Zimmermann R. Superlatt. Microstruct. 17:1995;439.
10. Šmilauer P., Wilby M.R., Vvedensky D.D. Phys. Rev. B. 47:1993;4119.
11. Schwoebel R.L., Shipsey E.J. J. Appl. Phys. 37:1966;3682.
12. Heyn C., Harsdorff M. Phys. Rev. B. 55:1997;7034.
13. Ishii A., Kawamura T. Appl. Surf. Sci. 130-132:1998;403.
14. Ito T., Shiraishi K. Surf. Sci. 357:1996;486.
15. Itoh M.et al. Phys. Rev. Lett. 81:1998;633.
16. Haider N., Wilby M.R., Vvedensky D.D. J. Crystal Growth. 127:1993;922.
17. Haider N., Wilby M.R., Vvedensky D.D. Appl. Phys. Lett. 62:1993;3108.
18. Biasiol G., Lelarge F., Leifer K., Kapon E. J. Crystal Growth. 195:1998;596.
19. Zimmermann R., Groe F., Runge E. Pure Appl. Chem. 69:1997;1179.
20. Rauch C.et al. Phys. Rev. Lett. 81:1998;3495.
21. Shitara T., Neave J.H., Joyce B.A. Appl. Phys. Lett. 62:1993;1658.
22. Ito T., Shiraishi K. Proceedings of the 22nd ICPS, Vancouver. 1994;World Scientific, Singapore.
23. Ito T., Shiraishi K. Jpn. J. Appl. Phys. 35:1996;L949.
24. A. Kley, M. Scheffler, Proceedings of the 23rd ICPS, Berlin, World scientific, Singapore, 1996, p. 1031.
25. Kratzer P., Morgan C.G., Scheffler M. Prog. Surf. Sci. 59:1998;135.
26. Kratzer P., Morgan C.G., Scheffler M. Phys. Rev. B. 59:1999;15246.
27. F. Groe, A. Kley, M. Scheffler, R. Zimmermann, Proceedings of the 24th ICPS, Jerusalem, 1998, World Scientific, Singapore, 1999, paper VII-C-7.
28. v. Beijeren H. Phys. Rev. Lett. 38:1977;993.
29. Kotrla M., Levi A.C. Surf. Sci. 317:1994;183.
30. Kawamura T. Surf. Sci. 298:1993;331.
31. Taguchi A., Shiraishi K., Ito T. Phys. Rev. B. 60:1999;11509.
32. Ito T., Shiraishi K., Kageshima H., Suzuki Y. Jpn. J. Appl. Phys. 37:1998;L488.
33. Shiraishi K., Suzuki Y., Kageshima H., Ito T. Appl. Surf. Sci. 130-132:1998;431.
34. Yen M.Y., Lee T.C., Chen P., Madhukar A. J. Vac. Sci. Technol. B. 4:1986;590.