Nucleation mechanisms during MBE growth of lattice-matched and strained III-V compound films

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 357-366

  Joyce, B A ^a   Vvedensky, D D ^a   Avery, A R ^a   Belk, J G ^a   Dobbs, H T ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION;

IN SITU DIAGNOSTIC PROBES; INDIUM ARSENIDE; LOW INDEX ORIENTATION;

SEMICONDUCTING FILMS;

EID: 0032098498     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00084-1     Document Type: Article

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