Arsenic adatom migration on a GaAs(100) surface using a first-principles calculation

Surface Science

Volumn 438, Issue 1-3, 1999, Pages 43-46

  Seino, Kaori ^a   Ishii, Akira ^a   Aisaka, Tsuyoshi ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; ARSENIC; ATOMS; COMPUTER SIMULATION; ELECTROMIGRATION; EPITAXIAL GROWTH; MONTE CARLO METHODS; SURFACE PHENOMENA;

ARSENIC ADATOM MIGRATION; FIRST PRINCIPLES CALCULATION; HOPPING BARRIER ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033347177     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00550-6     Document Type: Article

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