Modelling of compound semiconductor epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 67-72

  Heyn, Ch ^a   Franke, T ^a   Anton, R ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE;

SELF-CONSISTENT RATE THEORY;

SEMICONDUCTOR GROWTH;

EID: 0032680965     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01284-6     Document Type: Article

References (14)

1. Zinsmeister G. Vacuum. 16:1966;529.
2. Zinsmeister G. Thin Solid Films. 7:1971;51.
3. Venables J.A. Phil. Mag. 27:1973;693.
4. Venables J.A., Spiller G.D., Hanbücken M. Rep. Prog. Phys. 47:1984;399.
5. Tersoff J., Johnson M.D., Orr B.G. Phys. Rev. Lett. 76:1997;282.
6. Bales G.S., Chrzan D.C. Phys. Rev. B. 50:1994;6057.
7. Bales G.S., Zangwill A. Phys. Rev. B. 55:1997;R1973.
8. Heyn Ch., Harsdorff M. J. Crystal Growth. 133:1993;241.
9. Shitara T., Vvedensky D.D., Wilby M.R., Zhang J., Neave J.H., Joyce B.A. Phys. Rev. B. 46:1992;6815.
10. Heyn Ch., Harsdorff M. Phys. Rev. B. 55:1997;7043.
11. Heyn Ch., Franke T., Anton R. Phys. Rev. B. 56:1997;13483.
12. Weeks J.D., Gilmer G.H. Adv. Chem. Phys. 40:1979;157.
13. Foxon C.T., Joyce B.A. Surf. Sci. 50:1975;434.
14. Dobbs H.T., Vvedensky D.D., Zangwill A., Johansson J., Carlsson N., Seifert W. Phys. Rev. Lett. 79:1997;897.