In situ studies of III-V semiconductor film growth by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 106-112

  Joyce, B A ^a   Vvedensky, D D ^a   Jones, T S ^a   Itoh, M ^a   Bell, G R ^a   Belk, J G ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; STRAIN; STRESS RELAXATION;

HOMOEPITAXIAL GROWTH; INDIUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0032642934     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01295-0     Document Type: Article

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