1.3-μm AlGaInAs buried-heterostructure lasers

IEEE Photonics Technology Letters

Volumn 11, Issue 8, 1999, Pages 949-951

  Takemasa, Keizo ^a   Kubota, Munechika ^a   Munakata, Tsutomu ^a   Wada, Hiroshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; HEAT RESISTANCE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

BURIED HETEROSTRUCTURE LASERS; CHARACTERISTIC TEMPERATURE; FAR FIELD PATTERN; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0032677851     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.775309     Document Type: Article

References (10)

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