Limitations of the calibration curve method for determining dopant profiles from scanning capacitance microscope measurements

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 414-417

  Marchiando, J F ^a   Kopanski, J J ^a   Albers, J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ERROR ANALYSIS; FINITE ELEMENT METHOD; ION IMPLANTATION; MATHEMATICAL MODELS; MATRIX ALGEBRA; MONTE CARLO METHODS; SCANNING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CONVERSION CURVE METHOD (CCM); POISSON EQUATION; SCANNING CAPACITANCE MICROSCOPY (SCM);

CAPACITANCE MEASUREMENT;

EID: 0033725627     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591244     Document Type: Article

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