Theoretical and experimental analysis of leakage current in InGaAsP BH lasers with p-n-p-n current blocking layers

IEEE Journal of Quantum Electronics

Volumn 35, Issue 9, 1999, Pages 1332-1336

  Yoshida, Yasuaki ^a   Watanabe, Hitoshi ^a   Shibata, Kimitaka ^a   Takemoto, Akira ^a   Higuchi, Hideyo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LEAKAGE CURRENTS; LIGHT EMISSION; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING INDIUM COMPOUNDS;

BURIED HETEROSTRUCTURE LASERS; CARRIER DENSITY; CURRENT BLOCKING LAYERS; ELECTROLUMINESCENCE INTENSITY MEASUREMENT; INDIUM GALLIUM ARSENIDE PHOSPHIDE;

QUANTUM WELL LASERS;

EID: 0032590967     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.784593     Document Type: Article

References (15)

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